Accurate cold-test model of helical TWT slow-wave circuits
نویسندگان
چکیده
منابع مشابه
New Nonlinear Multifrequency TWT Model
We outline a new nonlinear multifrequency Traveling Wave Tube (TWT) model based on Eulerian electron beam equations. We identify and illustrate with preliminary examples types of problems the model may be applied to. In particular, the model is well suited to accommodate many closelyspaced frequencies in simulation and analysis.
متن کاملHigh-Efficiency TWT Design Using Traveling-Wave Bunch Compression
A bunch compression scheme designed to obtain high efficiency in relativistic traveling-wave tube (TWT) amplifiers is reported. Bunch compression is achieved by making the bunches stay in more positive slopes of the axial electric field in the amplifier. The resulting momentum gradient across the bunch tends to oppose space-charge spreading and helps to sustain short bunch lengths for long dist...
متن کاملDesign and Test of New Robust QCA Sequential Circuits
One of the several promising new technologies for computing at nano-scale is quantum-dot cellular automata (QCA). In this paper, new designs for different QCA sequential circuits are presented. Using an efficient QCA D flip-flop (DFF) architecture, a 5-bit counter, a novel single edge generator (SEG) and a divide-by-2 counter are implemented. Also, some types of oscillators, a new edge-t...
متن کاملImplementation of dispersion-free slow acoustic wave propagation and phase engineering with helical-structured metamaterials
The ability to slow down wave propagation in materials has attracted significant research interest. A successful solution will give rise to manageable enhanced wave-matter interaction, freewheeling phase engineering and spatial compression of wave signals. The existing methods are typically associated with constructing dispersive materials or structures with local resonators, thus resulting in ...
متن کاملAccurate Temperature Drift model of MOSFETs Mobility for Analog Circuits
Abstract An accurate compact MOSFETs model that can deal with effects of temperature drift is prerequisite for analog circuit design. Although the mobility behavior at high vertical field region is important for simulating analog circuits, however current physics based models neglect the temperature dependence of that at this region. In this paper, a new mobility model at high vertical field re...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 1998
ISSN: 0018-9383
DOI: 10.1109/16.662812